PNP Bipolar Junction Transistor (BJT) in a TO-126 package, featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 3A. This through-hole mounted component offers a minimum DC current gain (hFE) of 60 and a transition frequency of 45MHz. Operating across a wide temperature range from -55°C to 150°C, it boasts a power dissipation of 1W and is RoHS compliant.
Onsemi KSB744AYSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 45MHz |
| Gain Bandwidth Product | 45MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 45MHz |
| DC Rated Voltage | -60V |
| Weight | 0.761g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSB744AYSTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.