
PNP Bipolar Junction Transistor (BJT) in SOT-89 package. Features a 25V collector-emitter breakdown voltage and 1A maximum collector current. Offers a transition frequency of 110MHz and a minimum hFE of 90. Designed for surface mount applications with a maximum power dissipation of 2W. Operates across a wide temperature range from -55°C to 150°C. Lead-free and RoHS compliant.
Onsemi KSB798YTF technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 110MHz |
| Gain Bandwidth Product | 110MHz |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | KSB798 |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -25V |
| Weight | 0.1305g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSB798YTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
