PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 110MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
Frequency110MHz
PackageTO-226-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi KSB811YTA technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 110MHz |
| Gain Bandwidth Product | 110MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Series | KSB811 |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB811YTA Datasheet
Download the complete datasheet for Onsemi KSB811YTA to view detailed technical specifications.
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