NPN bipolar junction transistor in TO-92 package. Features a 60V collector-emitter breakdown voltage and 700mA maximum collector current. Offers a 50MHz transition frequency and a minimum hFE of 40. Operates from -55°C to 150°C with 800mW power dissipation. Through-hole mount, lead-free, and RoHS compliant.
Frequency50MHz
PackageTO-92
Current Rating700mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1008GBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 700mA |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1008GBU Datasheet
Download the complete datasheet for Onsemi KSC1008GBU to view detailed technical specifications.
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