NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 60V Collector-Emitter Voltage (VCEO) and 700mA Max Collector Current. This through-hole component offers a 50MHz transition frequency and a minimum hFE of 40, housed in a TO-92-3 package. With a maximum power dissipation of 800mW and an operating temperature range of -55°C to 150°C, it is lead-free and RoHS compliant, supplied in an ammo pack.
Frequency50MHz
PackageTO-92-3
Current Rating700mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1008GTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 700mA |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1008GTA Datasheet
Download the complete datasheet for Onsemi KSC1008GTA to view detailed technical specifications.
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