NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 140V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 700mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with 800mW power dissipation. RoHS compliant and lead-free.
Frequency50MHz
PackageTO-92
Current Rating700mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1009OBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 700mA |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 140V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1009OBU Datasheet
Download the complete datasheet for Onsemi KSC1009OBU to view detailed technical specifications.
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