
NPN bipolar junction transistor in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 30mA and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 700MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. This component is lead-free and RoHS compliant.
Onsemi KSC1187YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC1187YBU to view detailed technical specifications.
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