NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 30V collector-emitter breakdown voltage and a 700MHz transition frequency. This through-hole component offers a continuous collector current of 20mA and a minimum DC current gain (hFE) of 60. Designed for operation up to 700MHz, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW. The transistor is housed in a TO-92-3 package and is RoHS compliant.
Frequency700MHz
PackageTO-92-3
Current Rating20mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1393OTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 700MHz |
| Gain | 24dB |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1393OTA Datasheet
Download the complete datasheet for Onsemi KSC1393OTA to view detailed technical specifications.
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