
NPN bipolar junction transistor (BJT) for RF applications, featuring a 30V collector-emitter breakdown voltage and a maximum operating frequency of 700MHz. This through-hole component offers a continuous collector current of 20mA and a minimum DC current gain (hFE) of 40. Packaged in a TO-92 case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW. Lead-free and RoHS compliant.
Onsemi KSC1393YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 700MHz |
| Gain | 24dB |
| Gain Bandwidth Product | 700MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 30V |
| Weight | 0.179g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC1393YBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.