
NPN Bipolar Junction Transistor (BJT) in a TO-220 package, featuring a 300V collector-emitter breakdown voltage and a 300V collector-base voltage. This through-hole mounted transistor offers a maximum collector current of 200mA and a transition frequency of 80MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 15W. The device is lead-free and RoHS compliant.
Onsemi KSC1507YTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 200uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 15W |
| RoHS Compliant | Yes |
| Series | KSC1507 |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 300V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC1507YTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
