
NPN bipolar junction transistor (BJT) designed for RF applications. Features a 20V collector-emitter breakdown voltage and a 600MHz transition frequency. Maximum continuous collector current is 20mA, with a minimum DC current gain (hFE) of 70. Packaged in a TO-92-3 through-hole mount configuration, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 250mW.
Onsemi KSC1674OTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 600MHz |
| Gain Bandwidth Product | 600MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Frequency | 600MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC1674OTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
