NPN Bipolar Junction Transistor (BJT) designed for RF applications. Features a 20V collector-emitter breakdown voltage and a 600MHz transition frequency. Continuous collector current rating of 20mA. Packaged in a TO-226-3 (TO-92) through-hole mount configuration. Operating temperature range from -55°C to 150°C with 250mW maximum power dissipation. Lead-free and RoHS compliant.
Frequency600MHz
PackageTO-226-3
Current Rating20mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1674RBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 600MHz |
| Gain Bandwidth Product | 600MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Frequency | 600MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1674RBU Datasheet
Download the complete datasheet for Onsemi KSC1674RBU to view detailed technical specifications.
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