NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 50V Collector Base Voltage (VCBO). Offers a continuous collector current rating of 50mA and a maximum power dissipation of 250mW. Exhibits a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi KSC1675YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Series | KSC1675 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC1675YBU to view detailed technical specifications.
No datasheet is available for this part.