NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 1.1GHz transition frequency and gain bandwidth product. This through-hole component offers a maximum collector current of 50mA and a collector-emitter voltage of 15V. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 250mW. Packaged in a TO-92-3 case, this lead-free and RoHS compliant transistor is supplied in an ammo pack.
Frequency1.1GHz
PackageTO-92-3
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1730YTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 15V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1730YTA Datasheet
Download the complete datasheet for Onsemi KSC1730YTA to view detailed technical specifications.
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