
NPN Epitaxial Silicon Transistor, 150V Collector-Emitter Voltage, 1.5A Max Collector Current, and 25W Power Dissipation. This through-hole mounted bipolar junction transistor features a 4MHz transition frequency and a minimum hFE of 40. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-220-3 case. The component is lead-free and RoHS compliant.
Onsemi KSC2073H2TSTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 150V |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2073H2TSTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.