NPN bipolar junction transistor (BJT) in a TO-226-3 (TO-92L) package. Features a 150V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 50mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 100MHz. Operates within a temperature range of -55°C to 150°C with 800mW power dissipation. Lead-free and RoHS compliant, suitable for through-hole mounting.
Onsemi KSC2310YBU technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 150V |
| Weight | 0.185g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2310YBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.