NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 300V Collector-Emitter Voltage (VCEO) and 300V Collector Base Voltage (VCBO). This through-hole mounted component offers a maximum collector current of 100mA and a transition frequency of 50MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. Packaged in an Ammo Pack, this RoHS compliant transistor is designed for high voltage applications.
Frequency50MHz
PackageTO-226-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC2330OTA technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSC2330 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
| Weight | 0.3711027g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2330OTA Datasheet
Download the complete datasheet for Onsemi KSC2330OTA to view detailed technical specifications.
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