
NPN Epitaxial Silicon Transistor for through-hole mounting. Features a 100V Collector-Emitter Voltage (VCEO) and 7A Max Collector Current. Offers a minimum hFE of 40 and a Collector-Emitter Saturation Voltage of 600mV. Operates within a temperature range of -55°C to 150°C with a 1.5W Power Dissipation. Packaged in TO-220-3, this lead-free and RoHS compliant component is supplied in a rail/tube.
Onsemi KSC2334YTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 18.95mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2334YTU to view detailed technical specifications.
No datasheet is available for this part.
