NPN Bipolar Junction Transistor (BJT) in a TO-126 package. Features a 180V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Designed for through-hole mounting with a maximum power dissipation of 1.2W. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant and lead-free.
Frequency200MHz
PackageTO-126
Current Rating100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSC2682YS technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 180V |
| Collector Emitter Voltage (VCEO) | 180V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Series | KSC2682 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 180V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2682YS Datasheet
Download the complete datasheet for Onsemi KSC2682YS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
