NPN Bipolar Junction Transistor (BJT) in a TO-126 package. Features a 180V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current. Offers a transition frequency of 200MHz and a minimum hFE of 100. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. This through-hole mount component is lead-free and RoHS compliant.
Frequency200MHz
PackageTO-126
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC2682YSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 180V |
| Collector Emitter Voltage (VCEO) | 180V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Series | KSC2682 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 180V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2682YSTU Datasheet
Download the complete datasheet for Onsemi KSC2682YSTU to view detailed technical specifications.
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