NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. Features a maximum collector current of 1.2A and a DC rated voltage of 160V, with a collector-emitter breakdown voltage of 160V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 155MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.2W. This component is lead-free and RoHS compliant.
Frequency155MHz
PackageTO-126
Current Rating1.2A
MountingThrough Hole
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Technical Specifications
Onsemi KSC2690AOSTSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 155MHz |
| Gain Bandwidth Product | 155MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2880 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Transition Frequency | 155MHz |
| DC Rated Voltage | 160V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2690AOSTSTU Datasheet
Download the complete datasheet for Onsemi KSC2690AOSTSTU to view detailed technical specifications.
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