
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector-emitter voltage (VCEO) of 400V, a collector current rating of 500mA, and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C. This RoHS compliant component offers a minimum hFE of 20 and a collector-emitter saturation voltage of 1V.
Onsemi KSC2752OSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 11mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2752OSTU to view detailed technical specifications.
No datasheet is available for this part.
