NPN bipolar junction transistor (BJT) designed for RF applications. Features a 30V collector-emitter breakdown voltage and a maximum operating frequency of 600MHz. Offers a continuous collector current rating of 20mA and a minimum hFE of 90. Packaged in a TO-236-3 (SOT23-3) surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency600MHz
PackageTO-236-3
Current Rating20mA
MountingSurface Mount
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Technical Specifications
Onsemi KSC2755OMTF technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 600MHz |
| Gain | 23dB |
| Gain Bandwidth Product | 600MHz |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Frequency | 600MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2755OMTF Datasheet
Download the complete datasheet for Onsemi KSC2755OMTF to view detailed technical specifications.
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