
NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 20V collector-emitter breakdown voltage and an 850MHz transition frequency. This surface mount device, housed in a SOT-23 package, offers a maximum collector current of 30mA and a gain of 23dB. Operating across a temperature range of -55°C to 150°C, it is lead-free and RoHS compliant.
Onsemi KSC2756RMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 850MHz |
| Gain | 23dB |
| Gain Bandwidth Product | 850MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 850MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2756RMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
