NPN Bipolar Junction Transistor (BJT) for RF applications. Features a 20V collector-emitter breakdown voltage and 850MHz transition frequency. Offers a maximum collector current of 30mA and a minimum hFE of 60. Packaged in a SOT-23 surface mount case, this RoHS compliant component operates from -55°C to 150°C with 150mW power dissipation.
Frequency850MHz
PackageSOT-23
Current Rating30mA
MountingSurface Mount
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Technical Specifications
Onsemi KSC2756YMTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 850MHz |
| Gain | 23dB |
| Gain Bandwidth Product | 850MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 850MHz |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2756YMTF Datasheet
Download the complete datasheet for Onsemi KSC2756YMTF to view detailed technical specifications.
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