NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 1.1GHz transition frequency and 1.1GHz gain bandwidth product. This surface mount component operates with a 15V collector-emitter breakdown voltage and a maximum collector current of 50mA. It offers a minimum DC current gain (hFE) of 60 and is housed in a compact SOT-23 package. Designed for reliability, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency1.1GHz
PackageSOT-23
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Onsemi KSC2757RMTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 15V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 15V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2757RMTF Datasheet
Download the complete datasheet for Onsemi KSC2757RMTF to view detailed technical specifications.
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