NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a 50V collector-emitter voltage (VCEO) and a maximum collector current of 150mA. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 250mW. Lead-free and RoHS compliant.
Frequency300MHz
PackageTO-226-3
Current Rating150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC2785YBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2785YBU Datasheet
Download the complete datasheet for Onsemi KSC2785YBU to view detailed technical specifications.
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