NPN Bipolar Junction Transistor (BJT) in a TO-226-3 package. Features a 50V Collector-Emitter Voltage (VCEO) and 150mA Max Collector Current. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 300MHz. Designed for through-hole mounting, this lead-free and RoHS compliant component operates from -55°C to 150°C with a power dissipation of 250mW.
Frequency300MHz
PackageTO-226-3
Current Rating150mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSC2785YTA technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Series | KSC2785 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC2785YTA Datasheet
Download the complete datasheet for Onsemi KSC2785YTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.