NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-220-3 package. Features a 150V collector-emitter breakdown voltage and a 1.5A maximum collector current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 4MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 20W. This RoHS compliant component is supplied in a rail/tube package.
Frequency4MHz
PackageTO-220-3
Current Rating1.5A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSC3296YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSC3296 |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 150V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC3296YTU Datasheet
Download the complete datasheet for Onsemi KSC3296YTU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
