NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 500V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 18MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 40W.
Frequency18MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSC5020O technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 18MHz |
| Gain Bandwidth Product | 18MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| Transition Frequency | 18MHz |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5020O Datasheet
Download the complete datasheet for Onsemi KSC5020O to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.