NPN Bipolar Junction Transistor (BJT) with a 400V Collector-Emitter Breakdown Voltage and 5A Current Rating. Features a 400V Collector-Emitter Voltage (VCEO) and 800V Collector Base Voltage (VCBO). Operates with a maximum power dissipation of 30W and a transition frequency of 10MHz. Packaged in a TO-220-3 through-hole mount configuration, this component is lead-free and RoHS compliant.
Frequency10MHz
PackageTO-220-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi KSC5039FTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5039FTU Datasheet
Download the complete datasheet for Onsemi KSC5039FTU to view detailed technical specifications.
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