NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of 400V. Offers a maximum power dissipation of 75W and a collector-emitter saturation voltage of 500mV. Designed for through-hole mounting with a minimum hFE of 8. This component is lead-free and RoHS compliant, supplied in a 1000-unit tube.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
Power75W
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Technical Specifications
Onsemi KSC5305DTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 15.7mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Bits | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5305DTU Datasheet
Download the complete datasheet for Onsemi KSC5305DTU to view detailed technical specifications.
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