
NPN Bipolar Junction Transistor (BJT) in a DPAK surface-mount package. Features a 600V collector-emitter breakdown voltage, 2A continuous collector current, and 50W power dissipation. Operates up to 11MHz with a minimum hFE of 12. Designed for high voltage applications with a 1.2kV collector-base voltage. Packaged in a 2500-piece tape and reel.
Onsemi KSC5502DTM technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 310mV |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 11MHz |
| Gain Bandwidth Product | 11MHz |
| Height | 2.39mm |
| hFE Min | 12 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 2A |
| Max Frequency | 11MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 11MHz |
| DC Rated Voltage | 600V |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC5502DTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
