The KSC5502DTTU is a TO-220-3 packaged NPN transistor from Onsemi. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 2A. The transistor has a gain bandwidth product of 11MHz and a minimum current gain of 12. It is RoHS compliant and suitable for operation over a temperature range of -65°C to 150°C. The device is packaged in a TO-220-3 package and is available in quantities of 50.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSC5502DTTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 12V |
| Gain Bandwidth Product | 11MHz |
| hFE Min | 12 |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 11MHz |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5502DTTU Datasheet
Download the complete datasheet for Onsemi KSC5502DTTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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