KSC5504DTM

NPN BJT 600V 4A D2PAK Transistor

NPN bipolar junction transistor (BJT) in a D2PAK package, featuring a 600V collector-emitter breakdown voltage and a 4A continuous collector current. This device offers a 1.2kV collector-base voltage and a 600V collector-emitter voltage. With a transition frequency of 11MHz and a minimum hFE of 15, it supports up to 75W of power dissipation. Suitable for through-hole and surface mount applications, this lead-free and RoHS compliant component operates from -65°C to 150°C.

Frequency11MHz

PackageD2PAK

Current Rating4A

MountingThrough Hole, Surface Mount

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Technical Specifications

Onsemi KSC5504DTM technical specifications.

General

Package/Case	D2PAK
Collector Base Voltage (VCBO)	1.2kV
Collector Emitter Breakdown Voltage	600V
Collector Emitter Voltage (VCEO)	600V
Collector-emitter Voltage-Max	1.5V
Current Rating	4A
Emitter Base Voltage (VEBO)	12V
Frequency	11MHz
Gain Bandwidth Product	11MHz
hFE Min	15
Lead Free	Lead Free
Max Collector Current	4A
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	75W
Mount	Through Hole, Surface Mount
Number of Elements	1
Package Quantity	800
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	75W
RoHS Compliant	Yes
Transition Frequency	11MHz
DC Rated Voltage	600V