NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 600V collector-emitter breakdown voltage and a 4A continuous collector current rating. Offers a maximum power dissipation of 75W and a transition frequency of 11MHz. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency11MHz
PackageTO-220-3
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi KSC5504DTTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 11MHz |
| Gain Bandwidth Product | 11MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| RoHS Compliant | Yes |
| Transition Frequency | 11MHz |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5504DTTU Datasheet
Download the complete datasheet for Onsemi KSC5504DTTU to view detailed technical specifications.
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