NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 800V, with a collector-base voltage of 1.6kV. Offers a maximum power dissipation of 100W and a transition frequency of 5MHz. Operates within a temperature range of -65°C to 150°C and is lead-free and RoHS compliant.
Frequency5MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi KSC5603DTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.6kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Frequency | 5MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5MHz |
| DC Rated Voltage | 800V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5603DTU Datasheet
Download the complete datasheet for Onsemi KSC5603DTU to view detailed technical specifications.
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