NPN bipolar junction transistor in a TO-92 through-hole package. Features a 45V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C with 400mW maximum power dissipation. Lead-free and RoHS compliant.
Onsemi KSC815YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSC815 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC815YBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.