NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 30V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a 250MHz gain bandwidth product and a 200MHz transition frequency. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Through-hole mount, lead-free, and RoHS compliant.
Frequency250MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC839CYTA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Series | KSC839 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC839CYTA Datasheet
Download the complete datasheet for Onsemi KSC839CYTA to view detailed technical specifications.
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