NPN bipolar junction transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a collector-emitter voltage (VCEO) of 25V and a maximum collector current of 50mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 250mW. This RoHS compliant component is supplied in an ammo pack.
Onsemi KSC900GTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSC900 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC900GTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.