NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92 package. Features a maximum collector current of 150mA and a collector-emitter voltage of 50V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. This RoHS compliant component is supplied in bulk packaging.
Frequency1MHz
PackageTO-92
Current Rating150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC945CGBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Collector Current | 150mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
| Weight | 0.179g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC945CGBU Datasheet
Download the complete datasheet for Onsemi KSC945CGBU to view detailed technical specifications.
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