NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 50V Collector-Emitter Voltage (VCEO) and 150mA Max Collector Current. This bipolar junction transistor offers a 300MHz transition frequency and a minimum hFE of 40. Packaged in a TO-92 through-hole mount, it operates from -55°C to 150°C with a 250mW power dissipation. RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC945CYTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
150mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
40
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
50V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC945CYTA Datasheet
Download the complete datasheet for Onsemi KSC945CYTA to view detailed technical specifications.
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