
NPN Epitaxial Silicon Transistor, TO-92-3 package, featuring a 50V Collector-Emitter Voltage (VCEO) and 150mA maximum collector current. This bipolar junction transistor offers a minimum hFE of 40 and a transition frequency of 300MHz. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW. The component is RoHS compliant and supplied in an ammo pack.
Onsemi KSC945YTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC945YTA to view detailed technical specifications.
No datasheet is available for this part.
