NPN Bipolar Junction Transistor (BJT) with a 60V collector-emitter breakdown voltage and a 3A maximum collector current. This through-hole component features a TO-251-3 package and a 1W power dissipation. Operating across a temperature range of -55°C to 150°C, it offers a minimum DC current gain (hFE) of 60 and a transition frequency of 3MHz. The device is lead-free and RoHS compliant.
Frequency3MHz
PackageTO-251-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi KSD1221GTU technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5040 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | KSD1221 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD1221GTU Datasheet
Download the complete datasheet for Onsemi KSD1221GTU to view detailed technical specifications.
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