NPN bipolar junction transistor (BJT) featuring a 60V collector-emitter breakdown voltage and a 3A maximum collector current. This through-hole component offers a 60V collector-emitter voltage and a 1V collector-emitter saturation voltage. With a transition frequency of 30MHz and a minimum hFE of 500, it operates across a wide temperature range from -55°C to 150°C. The TO-220-3 package provides 2W of power dissipation.
Frequency30MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi KSD1273PTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD1273PTU Datasheet
Download the complete datasheet for Onsemi KSD1273PTU to view detailed technical specifications.
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