NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 60V. Offers a transition frequency of 160MHz and a minimum DC current gain (hFE) of 135. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 750mW. This RoHS compliant component is supplied in bulk packaging.
Frequency160MHz
PackageTO-92
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi KSD1616AYBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 135 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSD1616 |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD1616AYBU Datasheet
Download the complete datasheet for Onsemi KSD1616AYBU to view detailed technical specifications.
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