NPN Epitaxial Silicon Transistor, TO-220-3 package, featuring a 60V Collector-Emitter Voltage (VCEO) and a 3A continuous current rating. This through-hole mounted component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 3MHz. With a maximum power dissipation of 25W, it operates across a wide temperature range from -55°C to 150°C. The transistor is lead-free and RoHS compliant.
Frequency3MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi KSD2012GTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 15.87mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 60V |
| Weight | 2.27g |
| Width | 2.54mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD2012GTU Datasheet
Download the complete datasheet for Onsemi KSD2012GTU to view detailed technical specifications.
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