NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter voltage (VCEO) of 60V. Offers a minimum DC current gain (hFE) of 8 and a transition frequency of 400kHz. Maximum power dissipation is 1.5W, with an operating temperature range from -55°C to 150°C. This lead-free and RoHS compliant component is suitable for various electronic applications.
Onsemi KSD2058YTSTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 400kHz |
| Gain Bandwidth Product | 400kHz |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Frequency | 400kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSD2058 |
| Transition Frequency | 400kHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSD2058YTSTU to view detailed technical specifications.
No datasheet is available for this part.