NPN Power Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a 120V Collector-Emitter Voltage (VCEO) and a 6A maximum collector current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 10MHz. Designed for through-hole mounting with a maximum power dissipation of 40W and an operating temperature range of -55°C to 150°C.
Frequency10MHz
PackageTO-220-3
Current Rating6A
MountingThrough Hole
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Technical Specifications
Onsemi KSD363R technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 120V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi KSD363R Datasheet
Download the complete datasheet for Onsemi KSD363R to view detailed technical specifications.
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