NPN Epitaxial Silicon Transistor, TO-220 package, designed for through-hole mounting. Features a 120V collector-emitter breakdown voltage and a 300V collector-base voltage. Offers a maximum collector current of 6A and a maximum power dissipation of 40W. Minimum DC current gain (hFE) is 40, with a transition frequency of 10MHz. Operates within a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Frequency1MHz
PackageTO-220
Current Rating6A
MountingThrough Hole
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Technical Specifications
Onsemi KSD363RTU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 8V |
| Gain Bandwidth Product | 10MHz |
| Height | 14.2mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 120V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD363RTU Datasheet
Download the complete datasheet for Onsemi KSD363RTU to view detailed technical specifications.
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